HPC MSU

Publication Abstract

Inductive Switching with a 1-ka (Saturation) Normally on SiC JFET Switch Module

Mazzola, M., Gafford, J., Parker, C., & Molen, M. (2008). Inductive Switching with a 1-ka (Saturation) Normally on SiC JFET Switch Module. 2008 IEEE International Power Modulators and High Voltage Conference, PMHVC / Las Vegas, NV, United States: Inst. of Elec. and Elec. Eng. Computer Society, 445 Hoes Lane - P.O.Box 1331, Piscataway, NJ 08855-1. 21-24.

Abstract

Silicon-carbide junction field-effect transistors (JFETs) are maturing in performance, reliability, and manufacturability, especially with voltage ratings ranging from 600-1800 V. The vertical channel JFET (VJFET) with extremely low specific on-resistance (< 0.25 ω-mm2) is now available. In this paper, new results are reported on a two-switch module packaged in a commercially available plastic half-bridge power module. The switches can handle steady currents up to 500 A, with at least 1 kA available before drain-current saturation occurs. Switching results with a diode-clamped inductive load are reported to investigate voltage sharing between the two series devices when switched simultaneously. The normally on characteristics of these JFET switches are ideal for current sources like charging of inductive loads. 2008 IEEE.